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| ADVANCED LINEAR DEVICES, INC. ALD114804/ALD114804A/ALD114904/ALD114904A VGS(th)= -0.4V e TM EPAD EN (R) AB LE D QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD(R) MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION ALD114804/ALD114804A/ALD114904/ALD114904A are monolithic quad/dual NChannel MOSFETS matched at the factory using ALD's proven EPAD(R) CMOS technology. These devices are intended for low voltage, small signal applications. They are excellent functional replacements for normally-closed relay applications, as they are normally on (conducting) without any power applied, but could be turned off or modulated when system power supply is turned on. These MOSFETS have the unique characteristics of, when the gate is grounded, operating in the resistance mode for low drain voltage levels and in the current source mode for higher voltage levels and providing a constant drain current. ALD114804/ALD114804A/ALD114904/ALD114904A MOSFETS are designed for exceptional device electrical characteristics matching. As these devices are on the same monolithic chip, they also exhibit excellent temperature tracking characteristics. They are versatile as design components for a broad range of analog applications, such as basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications. Besides matched pair electrical characteristics, each individual MOSFET also exhibits well controlled parameters, enabling the user to depend on tight design limits corresponding to well matched characteristics. These depletion mode devices are built for minimum offset voltage and differential thermal response, and they are suitable for switching and amplifying applications in single supply (0.4V to + 5V ) or dual supply (+/- 0.4V to +/-5V) systems where low input bias current, low input capacitance and fast switching speed are desired. These devices exhibit well controlled turn-off and sub-threshold charactersitics and therefore can be used in designs that depend on sub-threshold characteristics. The ALD114804/ALD114804A/ALD114904/ALD114904A are suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. A sample calculation of the DC current gain at a drain current of 3mA and gate input leakage current of 30pA = 100,000,000. It is recommended that the user, for most applications, connect V+ pin to the most positive voltage potential (or left open unused) and V- and N/C pins to the most negative voltage potential in the system. All other pins must have voltages within these voltage limits. FEATURES * Depletion mode (normally ON) * Precision Gate Threshold Voltages: -0.4V +/- 0.02V * Nominal RDS(ON) @VGS=0.0V of 5.4K * Matched MOSFET to MOSFET characteristics * Tight lot to lot parametric control * Low input capacitance * VGS(th) match (VOS) -- 20mV * High input impedance -- 1012 typical * Positive, zero, and negative VGS(th) temperature coefficient * DC current gain >108 * Low input and output leakage currents ORDERING INFORMATION Operating Temperature Range* 0C to +70C 0C to +70C 16-Pin 16-Pin 8-Pin 8-Pin Plastic Dip SOIC Plastic Dip SOIC Package Package Package Package ALD114804APC ALD114804ASC ALD114904APA ALD114904ASA ALD114804 PC ALD114804SC ALD114904PA ALD114904SA * Contact factory for industrial temp. range or user-specified threshold voltage values APPLICATIONS * Functional replacement of Form B (NC) relays * Ultra low power (nanowatt) analog and digital circuits * Ultra low operating voltage (<0.2V) analog and digital circuits * Sub-threshold biased and operated circuits * Zero power fail safe circuits in alarm systems * Backup battery circuits * Power failure and fail safe detector * Source followers and high impedance buffers * Precision current mirrors and current sources * Capacitives probes and sensor interfaces * Charge detectors and charge integrators * Differential amplifier input stage * High side switches * Peak detectors and level shifters * Sample and Hold * Current multipliers * Discrete analog switches and multiplexers * Discrete voltage comparators PIN CONFIGURATION ALD114804 N/C* GN1 DN1 S12 VDN4 GN4 N/C* 1 2 3 4 5 6 7 8 VVM4 M3 M1 M2 V- V- 16 15 14 N/C* GN2 DN2 V+ S34 DN3 GN3 N/C* V+ 13 12 11 10 9 V- PC, SC PACKAGES ALD114904 VV- N/C* 1 2 3 4 8 7 N/C* GN1 DN1 S12 GN2 DN2 V- M1 M2 6 V5 PA, SA PACKAGES *N/C pins are internally connected. Connect to V- to reduce noise Rev 1.0-0506 (c)2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com ABSOLUTE MAXIMUM RATINGS Drain-Source voltage, VDS Gate-Source voltage, VGS Power dissipation Operating temperature range PA, SA, PC, SC package Storage temperature range Lead temperature, 10 seconds 10.6V 10.6V 500 mW 0C to +70C -65C to +150C +260C OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V (or open) V- = -5V TA = 25C unless otherwise specified CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. ALD114808A / ALD114908A Parameter Gate Threshold Voltage Symbol VGS(th) VOS VOS VGS(th) Min -0.42 Typ -0.40 Max -0.38 ALD110848 / ALD114908 Min -0.44 Typ -0.40 Max -0.36 Unit V Test Condition IDS =1A VDS = 0.1V IDS =1A VDS1 = VDS2 ID = 1A ID = 20A, VDS = 0.1V ID = 40A VGS = +9.1V VGS = +3.6V VDS = +5V VGS =+3.6 V VDS = +8.6V Offset Voltage VGS1-VGS2 VGS1-VGS2 Tempco GateThreshold Tempco 2 5 7 20 mV 5 -1.7 0.0 +1.6 12.0 3.0 5 -1.7 0.0 +1.6 12.0 3.0 V/ C mV/ C On Drain Current IDS (ON) mA Forward Transconductance GFS GFS GOS RDS (ON) 1.4 1.4 mmho Transconductance Mismatch Output Conductance 1.8 68 1.8 68 % mho VGS =+3.6V VDS = +8.6V VDS = 0.1V VGS = +3.6V VDS = 0.1V VGS = +0.0V Drain Source On Resistance 500 500 Drain Source On Resistance RDS (ON) 5.4 5.4 K Drain Source On Resistance Tolerance Drain Source On Resistance Mismatch Drain Source Breakdown Voltage Drain Source Leakage Current1 RDS (ON) 10 10 % RDS (ON) BVDSX IDS (OFF) IGSS CISS CRSS ton toff 10 0.5 10 0.5 % V IDS = 1.0A VGS = -1.4V VGS = -1.4V, VDS =+5V TA = 125C VDS = 0V VGS = +10V TA =125C 10 100 4 30 1 10 100 4 30 1 pA nA pA nA pF pF ns ns dB Gate Leakage Current1 3 3 Input Capacitance Transfer Reverse Capacitance Turn-on Delay Time Turn-off Delay Time Crosstalk Notes: 1 2.5 0.1 10 10 60 2.5 0.1 10 10 60 V+ = 5V RL= 5K V+ = 5V RL= 5K f = 100KHz Consists of junction leakage currents ALD114804/ALD114804A/ALD114904/ALD114904A Advanced Linear Devices 2 |
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